august 1992 speciality avionics/jtids applications rf & microwave transistors .400 x .400 2lfl (s036) hermetically sealed . refractory/gold metallization . emitter site ballasted . 15:1 vswr capability . low rf thermal resistance . input/output matching . overlay geometry . metal/ceramic hermetic package . p out = 30 w min. with 7.8 db gain description the AM80912-030 device is a high power class c transistor specifically designed for jtids pulsed out- put and driver applications. this device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output vswr at rated rf conditions. low rf thermal resistance and computerized auto- matic wire bonding techniques ensure high reliability and product consistency. the AM80912-030 is supplied in the hermetic met- al/ceramic package with internal input matching structures. pin connection branding 80912-30 order code AM80912-030 absolute maximum ratings (t case = 25 c) r th(j-c) junction-case thermal resistance 2.2 c/w *applies only to rated rf amplifier operation. AM80912-030 1. collector 3. emitter 2. base 4. base thermal data symbol parameter value unit p diss power dissipation* (t c 85 c) 75 w i c collector current* 3.5 a v cc collector-supply voltage* 40 v t j junction temperature (pulsed rf operation) 250 c t stg storage temperature - 65 to +200 c 1/6
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 960 1215mhz p in = 5.0w v cc = +35v 30 36 w h c f = 960 1215mhz p in = 5.0w v cc = +35v 40 45 % g p f = 960 1215mhz p in = 5.0w v cc = +35v 7.8 8.6 db note: pulse format: 6.4 m s on 6.6 m s off, repeat for 3.3 ms, then off for 4.5125 ms. duty cycle: burst 49.2%, overall 20.8% static dynamic symbol test conditions value unit min. typ. max. bv cbo i c = 10ma 55 v bv ebo i e = 1ma 3.5 v bv cer i c = 20ma r be = 10 w 55 v i ces v ce = 35v 5.0 ma h fe v ce = 5v i c = 1.0a 15 150 AM80912-030 2/6
typical performance typical broadband power amplifier typical relative power output & collector efficiency* vs collector voltage pulse width ( m sec) q jc (?c/w) maximum thermal resistance vs pulse width & duty cycle p in = 5 w v cc = 35 v t c = 40?c dc = 4% dc = 20% AM80912-030 3/6
*normalized impedance impedance data typical collector load impedance p in = 5w v cc = +35v z o * = 50 w z cl typical input impedance p in = 5w v cc = +35v z o * = 50 w z in freq. z in ( w )z cl ( w ) l = 960 mhz 4.5 + j 6.0 11.0 - j 0.5 m = 1090 mhz 5.5 + j 6.3 12.0 - j 2.0 h = 1215 mhz 5.0 + j 5.0 12.5 - j 5.0 AM80912-030 4/6
package mechanical data test circuit AM80912-030 5/6
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a AM80912-030 6/6
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